Novel Technique for Determination of Actual Pixel Size in Dense Arrays of Infrared Detectors

Abstract

A novel technique is proposed for determining the actual pixel size in dense arrays of infrared detectors. The technique is based on probing individual pixels in an array and analyzing the parasitic bipolar transistor formed between them to determine the lateral diffusion width and, hence, the actual pixel diameter. The actual pixel diameter can then be used to separate the area-dependent dark current from the periphery-dependent dark current. The result shows that, in the present arrays, the dark current is dominated by the periphery current, unless the pixels are so close to each other that their depletion regions overlap.