Abstract
We have succeeded in enhancing the current-perpendicular-to-plane (CPP) magnetoresistance of the synthetic spin-valves by controlling the spin-dependent transport through the synthetic ferrimagnetic pinned layer using impurities. The new pinned layer overcomes the disadvantage of the synthetic pinned layer in CPP spin-valves for the magnetoresistance reduction. The experimental results are well described by our calculations based on the two-current theory. The proposed pinned layer, together with our newly developed magnetoresistive ferromagnetic materials, will be quite effective in producing CPP spin-valve sensors for ultrahigh-density data storage systems.
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