Abstract
Nowadays, the search for novel compounds by chemical synthesis is in trend. Herein, we report the deposition of Cd1-x-yZnxCuySe (0.025 ≤ x = y ≤ 0.15) films by facile, industry-oriented chemical synthesis. The Cd1-x-yZnxCuySe thin films were deposited at the optimized growth conditions (temperature = 70 ± 0.1 °C, pH = 10.3 ± 0.1, substrate rotation speed = 70 ± 2 rpm and time = 100 min). As-synthesized thin films were characterized for physical, chemical, topographical and electrical attributes. The study of vibrational modes in Cd1-x-yZnxCuySe thin films was done with the help of Raman spectroscopy. Improvement in surface topography with the integration of Cu2+ and Zn2+ into the CdSe lattice has been noticed by the atomic force microscopy (AFM). The electrochemical impedance spectroscopy revealed lower values of Rs and Rct for x = y = 0.05 composition. Chemical deposition of Cd1-x-yZnxCuySe thin films may offer an excellent way to fabricate quaternary chalcogenide-based absorber materials for solar cells.
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