Novel suppressor for damascene copper electrodeposition: Thioether-modified polyether with enhanced adsorption through an adjustable synthesis strategy

Abstract

The void-free deposition of small-sized and high-aspect ratio interconnect structures requires stronger suppressors than conventional polyethers. In this work, thioether was introduced into polyether to develop novel suppressors with improved adsorption on electrode. The structure of thioether-modified polyether can be easily tailored by choosing proper polyether and thiol compound, thus providing a simple way to regulate electrochemical properties of the suppressor. The electrochemical and copper filling performance related to the molecular structure of novel suppressors were systematically investigated. Thioether-modified polyether, which retains the strong polarizability of typical suppressor and exhibits high resistance to accelerator desorption, can significantly suppress copper deposition on feature sidewalls. This enabled defect-free filling of narrower features at a concentration much lower than the typical usage concentration of suppressor. The modified polyethers with ethylene-propylene-ethylene (EPE) oxide triblock ether chains exhibited higher polarization strength and concentration dependence, facilitating the higher deposition current at the bottom during filling. The length and block ratio of ether chain further influenced the anti-desorption ability of the modified polyether, thereby impacting their suppression on sidewalls, which is crucial in filling process. The convenient structural adjustments for thioether-modified polyether, combined with the derived structure-property relationship, contribute to the development of new suppressors with strong adsorption performance.