Abstract
We report the first investigation of transport properties of two-dimensional electron systems in strained InAsxP1−x quantum-well channels. The InP/InAsxP1−x modulation-doped heterostructures were grown by the low-pressure OMCVD technique. The dependence of the transport parameters on the arsenic composition (x) has been studied using Hall, Shubnikov de Haas, and cyclotron resonance measurements. Hall mobilities of 6100 and 52 700 cm2/V s, with carrier concentrations of 2.3×1012 and 1.5×1012 cm−2 at 300 and 77 K, respectively, were measured for x=0.6.
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