Abstract
A new type of split-gate MOSFET (SG-MOSFET) is described that employs a complementary poly-Si-gate buried-channel MOS process. In this configuration, complementary SG-MOS's provide higher transconductance and a one-order smaller magnitude of channel-length modulation than with conventional buried-channel MOSFET's. Moreover, there is no requirement for additional mask steps. Four-times higher packing density was also obtained in a differential amplifier application.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
