Abstract
Novel p-type SnO:Mn:K thin films were synthesized by a sol-gel deposition technique on soda-lime glass substrates. The structure of the SnO:Mn:K thin films were investigated by scanning electron microscopy and X-ray diffraction pattern measurements and were found to be strongly influenced by the dopant concentration, with a significant changes in film morphology as the KMn dopant increases. Hall effect measurement revealed that p-type SnO:Mn:K thin films can be obtained within the optimized doping concentration. The p-type doping was also confirmed by integrating the SnO:Mn:K thin film onto n-type crystalline silicon to form a heterojunction device.
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