Novel SnO2-coated β-Ga2O3 nanostructures for room temperature hydrogen gas sensor

Abstract

Nanostructured β-Ga2O3 nanobelts are fabricated by thermal evaporation method at a temperature around of 1120 °C. Subsequently, a sol-gel processed SnO2 layer is employed to coat β-Ga2O3 nanobelts. This simple deposition technique is confirmed to be a promising route to incorporate a coating material onto nanostructured films, resulting in an attractive approach to modify the functionality of gallium oxide. In comparison with the data reported in the literature, the sensing characteristics of SnO2-functionalized β-Ga2O3 nanobelts to analyte gas H2 in the concentration range (33–1000 ppm) and within the temperature range (room temperature – 200 °C) are found to be greatly improved.