Novel Single-Wafer Single-Chamber Dry and Wet Hybrid System for Stripping and In Situ Cleaning of High-Dose Ion-Implanted Photoresists

Abstract

There is increasing demand for moving from batch immersion tools to single-wafer spin tools for silicon wafer cleaning, etching, and photoresist/residue removal in advanced semiconductor manufacturing. However, high-dose ion-implanted photoresist removal using a conventional single-wafer spin tool is very difficult. We have developed a novel single-wafer single-chamber dry and wet hybrid system in combination with dry ashing and moderate-temperature wet-cleaning treatments by implementing an atmospheric-pressure plasma unit into a conventional single-wafer spin cleaning tool. This compact single-wafer single-chamber system can completely remove the hardened photoresist due to high-dose ion-implantation by an atmospheric-pressure plasma ashing process followed by an in situ wet chemical process in the same single chamber within 2 min. This single-wafer single-chamber dry/wet hybrid system offers less than 1/3 smaller footprint, less than 1/4 shorter cycle time (for 50 wafer processing), and potentially better process control and less contamination risk, as well as lower equipment cost, compared to the conventional combination of two separate dry- and wet-processing systems.