Abstract
We report on the successful realization of a novel single electron memory device utilizing a Schottky in-plane gate (IPG) quantum wire transistor (QWTr) with nano Schottky metal dots whose position and size can be precisely controlled. Current–voltage (I–V) characteristics of the nano-metal dot formed on n-GaAs showed clear hysteresis which suggests charging of the nano-metal dot. A fabricated single electron memory device utilizing nano-metal dots showed clear threshold voltage shift once the bias was applied to the charging control gate of the nano-metal dot. This indicates successful memory operation of the fabricated device.
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