Novel silicon-on-insulator lateral power device with step width drift region

Abstract

A novel silicon-on-insulator (SOI) lateral power device with step width drift region (SW) is proposed in this paper. The drift region of the new device is divided into several regions with different width increasing from source to drain. New additional electric field peaks are formed at the steps, which modulate the electric field and enhance the breakdown voltage. Meanwhile, the drift doping concentration is increased and thus reduces the specific on-resistance. Compared with the conventional device, a 35% increase in the breakdown voltage and a 21% decrease in the specific on-resistance are obtained in the proposed device.