Abstract
Novel self-assembled Dy doped AlN (AlN:Dy) microstructures derived from nanosheets (NSs) were prepared using an improved arc discharge method. The structure, morphology, optical and magnetic properties of AlN:Dy microstructures were characterized by XRD, XPS, FESEM, HRTEM, PL and VSM studies. The electrostatic interactions of NSs arising from Dy3+ doping into AlN and electric field attraction created by arc discharge, are responsible for the formation of self-assembled AlN:Dy microstructures. The AlN:Dy microstructures exhibited an intensive white emission and room temperature ferromagnetism. This work not only demonstrates an effectivestrategy to assemble complex architectures, but also provides a new opportunity to design multifunctional materials, throughdoped wide band semiconductor.
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