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Abstract
Titanium (Ti) liners have been widely used in ULSI technology to improve contact/via resistance. As devices scale down to 32nm and below, Ti extends its application as a wetting layer for planar metal gate and 3D tri-gate structures. To meet the accompanying challenges, a novel RF/DC PVD chamber was developed, operating with capacitively coupled plasma (CCP) and a DC source to create high metal-ion flux with low energy. The new technology reduces overhang and increases bottom coverage. This paper presents the chamber’s tuning knobs that fulfill different process requirements for contact and metal-gate, thereby widening the process window for effective gap fill.
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