Abstract
The evaluation of error correction code (ECC) for NAND flash memory is increasingly complicated by the increasing bit error rate in memory. The concept of error-free information capacity is proposed to evaluate the performance ECC of NAND flash memory. The new method simultaneously considers the capacity and reliability of NAND flash memory. Low-density parity-check (LDPC) codes with a medium code rate can improve the integrated performance of NAND flash memory in order of magnitudes. Observations provide guides for the development of ECC schemes in NAND flash memory in future.
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