Abstract
<p indent=0mm>In nanometer digital latches, multiple-node upsets (MNU) are likely to occur. Although some existing radiation hardening by design (RHBD) latches based on the interlocked cells can recover all MNUs, they require more sensitive nodes and transistors. To obtain higher reliability and lower hardware redundancy, the radiation upset mechanism is utilized. First, the masked transistors are used to reduce the number of sensitive nodes, thus reducing the number of transistors. Second, two cells are interlocked by using their pull-up transistors, and then a RHBD latch with the MNU tolerance capability is proposed. Compared with the existing RHBD latches based on the interlocking techniques in <sc>65 nm</sc> process, the proposed latch can reduce 12.82% area, 319.22% delay and 10.66% power on average.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Computer-Aided Design & Computer Graphics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
