Abstract

We used the tone burst floating probe method to measure plasma parameters in a hollow cathode discharge. In this method, the electron temperature is directly calculated from a shift in the floating potential of the burst interval when a tone burst signal is applied to a probe through an intermediary blocking capacitor. The tone burst signal is a signal that applies an ac signal for a fixed time and turns off the remaining time of the cycle. It was possible to measure the same electron temperature as in the floating probe method that we previously reported. In the tone burst floating probe method, it is possible to measure the ion current by a shift in the floating potential from the time constant of the burst interval. This is a new measurement method that can measure the plasma density from the ion current and the electron temperature during the tone burst signal input.

Highlights

  • L OW-PRESSURE plasma is widely used in semiconductor manufacturing processes, such as plasma chemical vapor deposition (CVD) [1]–[3], sputtering [4]–[6], and etching [7]–[9], and its research and development are still in progress at present [10]

  • In order to further develop the plasma of the above process, it is indispensable to construct a manufacturing system with the stable control of various plasma parameters

  • N0 can be calculated from the obtained Te and Ii. We study these plasma parameters by using the tone burst floating probe method in various hollow cathode discharge processes

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Summary

Introduction

L OW-PRESSURE plasma is widely used in semiconductor manufacturing processes, such as plasma chemical vapor deposition (CVD) [1]–[3], sputtering [4]–[6], and etching [7]–[9], and its research and development are still in progress at present [10]. In this process, it is necessary to control the physical properties of the plasma.

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