Abstract
A novel RF small-signal model in the form of a physics-based equivalent circuit for advanced bulk FinFETs is proposed. Based on the unique multifin structure, parallel resistance–capacitance branches are introduced to account for the gate–source and gate–drain admittances. The deembedding is carefully performed after its effectiveness is verified by accurately modeling the pad and interconnect parasitics. An analytical method is developed to directly extract the model parameters from measurements. The model is validated in 7 and 14 nm bulk FinFET technologies, and the modeled results show an excellent agreement with the measured data up to 50 GHz ( $\!\sim \!~{f} _{\mathbf {T}} \boldsymbol /4$ ). The dependencies of FinFET RF performances on the layout dimensions are investigated, and they are compared between the two advanced FinFET technologies.
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