Abstract
Molecular glass resist has been considered as one of the best choices for a new generation of lithography. In this work, a new type of photoactive compound was obtained by the esterification of tannic acid with 2-diazo-1-naphthoquinone-4-sulfonyl chloride(2,1,4-DNQ-Cl) and ditertbutyl dicarbonate. The new obtained compound possessed both a photosensitive group of diazonaphthoquinone sulfonate(2,1,4-DNQ) and a group of acidolytic protection. Upon the irradiation of the compound under 365 nm light, the former group was photolyzed and converted into indene carboxylic acid along with a small amount of sulfonic acid, which could lead to the deprotection of the latter group. As a result, a novel i-line molecular glass photoresist was formed with the chemical modification of tannic acid. The experimental results show that the modificated compound had a fair solubility in many organic solvents. The lithographic performance of the resist was evaluated on an i-line exposure system with high photosensitivity and resolution as well.
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