Abstract
A new growth process, called vapour interdiffusion process (VIP), intermediate between interdiffusion multilayer process (IMP) and atomic layer epitaxy (ALE), has been investigated to produce homogeneous Cd x Hg 1− x Te layers by OMCVD at 300°C. Experimental conditions such as flow rate, partial pressures and II VI ratio have been previously optimized to grow CdTe and HgTe at this temperature. Compared to direct alloy growth (DAG) and IMP, VIP is shown to give better surface morphology and crystallographic quality of the layers. Sample quality was characterised by X-ray double diffraction and photoluminescence while surface morphology was assessed by scanning electron microscopy (SEM).
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