Abstract
For the first time a stochastic model of the program operation in NAND flash memories is proposed. The model incorporates intrinsic noise effects on the threshold voltage (Vth) distribution of the memory cells in incremental step pulse programming (ISPP) schemes. An excellent agreement of the model with experimental data at 48 nm ground rule is demonstrated. This model for cell-system interaction (MCSI) directly makes the link between memory transistor properties and memory system characteristics. It enables efficient algorithm development as well as evaluation of device concepts for future technology nodes with regard to the expected memory system performance and reliability.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
