Novel Model for Analysis and Optimization of Silicon Photomultiplier-Based Scintillation Systems

Abstract

Nowadays, silicon photomultipliers (SiPMs) are extensively used for absorption of scintillation light in all types of scintillators in high-energy physics. Fast spread of SiPMs resulted in a rapid development of both analytical and Monte Carlo models. Models describe the response of these silicon integrated circuits. We introduce a novel Monte Carlo model of SiPM with a scintillator module that enables modeling the response of SiPM to dynamic scintillation processes. The model introduces several improvements over other models. This article focuses on the analysis of pulse shape discrimination (PSD) performance of SiPM-based scintillation systems since such techniques are often used to discriminate between incident particles of ionizing radiation. The algorithms for PSD are sensitive to the shape of the pulse and SiPMs have several mechanisms that influence the shape of the output pulse, such as bandwidth of the system, the presence of fast decay components, and the recovery time of individual microcells. Some of these mechanisms are not present in a classical photomultiplier, for instance, a recovery time or the fast decay component. We have analyzed the performance of three different PSD algorithms with three SiPMs (MicroFC-30020, MicroFC-30035, and MicroFC-30050) coupled with scintillators EJ-301 and EJ-276. Several conclusions are drawn from the analysis. The two most important ones are that optimized systems need to finetune their bandwidth and that scintillators with fast decay signals are better suited for photomultipliers with lower recovery time and vice versa. It is also shown that the classical charge comparison algorithm does not reach the performance of modern algorithms, for instance, frequency gradient analysis.