Abstract
An ion beam treatment of high purity single crystal silicon specimens was performed with different shots by the irradiation of intense pulsed ion beams (IPIB), which were generated by an accelerating voltage of 350kV and with the current density of 130A/cm2. As the result of irradiation, the formation of various microstructures caused by the irradiation effect, especially the thermal effect is confirmed by SEM and XRD analysis, and the corresponding processes are described and related explanations are given.
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