Novel memristor with Au/SnSe/ITO structure: First fabrication via a hydrothermal and sputtering approach

Abstract

The memristor holds significant promise as a key electronic element in neuromorphic computing, enabling synaptic functionalities. Consequently, synthesizing memristors with innovative structures holds immense practical value. In this study, we successfully fabricated a novel memristor with an Au/tin selenide (SnSe)/ITO configuration, utilizing a straightforward hydrothermal and sputtering approach. This marks the inaugural instance of such a fabrication technique. We further optimized the memristor's performance by minimizing the thickness of the switching layer, ensuring robust memristive behavior even after 80 cycles and 2700 seconds. Additionally, we delved into the four primary conduction mechanisms of the proposed device. This work not only enhances our comprehension of SnSe memristors with unique structures but also lays a foundation for the development of efficient and stable hydrothermal-synthesized memristive devices.