Abstract
Extreme Ultra-Violet (EUV) lithography is considered as one of the most promising candidates for next generation lithography (NGL) that can print sub-20nm half pitch. In order to implement EUV technology for actual device production, resist material is one of the critical items that require significant improvement in overall performance. Current most challenging technical requirement is the simultaneous improvement in resolution (R), line width roughness (L) and sensitivity (S). In order to achieve this requirement, many research groups are developing novel materials such as molecular glass[1],[2], polymer bound photo-acid generator (PAG)[3], high quantum yield PAG[4], sensitizer[5] and high absorption resin[6].In this study, we focused on innovative PAG material development through the investigation of PAG acid diffusion length and PAG anion structure. Also, novel molecular resist consisting of protected Noria has been developed and its feasibility demonstrated.As the results of this study, it was found that PAG plays key function in order to achieve simultaneous RLS improvement. Additionally, it turned out that molecular resist protected Noria has high potential towards sub-20nm resolution. This study is hoped to contribute to the EUV resist development at sub-20nm half pitch generation.
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
