Abstract
Novel ion beam annealing (HIBA, High energy heavy Ion Beam Annealing) with high energy (∼2.5 MeV) heavy ion beam is presented. By HIBA, an amorphous Si layer is recrystallized below (∼300°C of substrate temperature (much lower than oridinary solid phase epitaxial growth temperature ∼600°C). Also, the temperature just under the beam spot is estimated to be ∼20°C higher at most than that of surrounding region, because of large beam spot size (∼10 mmφ) and rapid scan speed (∼104 cm/s). This low temperature feature is quite different from the conventional furnace, laser, electron or low energy ion beam annealing. After HIBA, impurity As atoms are located at substitutional site with no tetrahedral interstitial component and are scarcely redistributed.
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