Abstract
Novel ion beam annealing (HIBA, High energy heavy Ion Beam Annealing) with high energy (∼2.5 MeV) heavy ion beam is presented. By HIBA, an amorphous Si layer is recrystallized below (∼300°C of substrate temperature (much lower than oridinary solid phase epitaxial growth temperature ∼600°C). Also, the temperature just under the beam spot is estimated to be ∼20°C higher at most than that of surrounding region, because of large beam spot size (∼10 mmφ) and rapid scan speed (∼104 cm/s). This low temperature feature is quite different from the conventional furnace, laser, electron or low energy ion beam annealing. After HIBA, impurity As atoms are located at substitutional site with no tetrahedral interstitial component and are scarcely redistributed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
