Abstract
A novel electrode structure to realize an "ideal" ohmic contact is proposed. A new kind of low-loss and high-speed diode (LLD) is realized by utilizing this electrode structure. LLD shows a remarkably fast recovery as a Schottky diode, using no gold doping, while the reverse blocking voltage and operating temperature limit are far higher than for a Schottky diode. LLD is easily incorporated into monolithic combination with transistors, and is useful for various power applications.
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