Abstract
A novel low-cost wideband Si-based submount is proposed and fabricated for 40-Gb/s optoelectronic devices. The submount contains a coplanar waveguide (CPW) for microwave-signal feeding and a TaN thin-film resistor for impedance matching. The CPW transmission line is directly formed on high-resistivity Si substrate and exhibits a transmission loss as low as 0.165 dB/mm up to 40 GHz. Such a configuration has the advantage of a simplified fabrication procedure and efficient heat dissipation. As a demonstration, a high-speed electroabsorption (EA) modulator is chip-level packaged using the Si-based submount. The small-signal modulation bandwidth is measured to be more than 33 GHz, which is the first report of 40-Gb/s optoelectronic devices on Si-based submount. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 90–93, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20733
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
