Abstract
Pb0.33Sn0.67Te is an important semiconductor thermoelectric material. It was successfully synthesized through a HVPG technique. The growth temperature and time are varied in the range of 1000 °C–1200 °C and 4–8 h, respectively. A 2k factorial design of experiments is used to study the effect of material thermoelectric performance (ZT). Investigations revealed that maximum ZT of 0.084 can be achieved at 1200 °C growth temperature of and 4 h anneal time of. The crystals showed high ZT value, which is likely to have contributed to the ZT enhancement. It showed that Pb0.33Sn0.67Te manufactured via HVPG applied for thermoelectric applications.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
