Abstract
Based on the damage mechanism of single-event transient (SET) in a MOS device, a new irradiated reinforcement uniaxial strained Si Nano NMOSFET device is further proposed, and the new structure device has no effect on the electrical properties of its original structure. Moreover, the new reinforced device of groove structure can efficiently reduce not only charge collection but also SET pulse widths (WSET). Compared with the conventional NMOS and drain-wall structure, we find that the proposed novel layout technique can provide the best benefit of SET mitigation with a small sacrifice in the effective area. Therefore, the successful development of the research results will play a positive role in promoting the theoretical and technological progress of high-performance radiation-resistant core electronic components and lay a foundation and create conditions for their application in space radiation and nuclear radiation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
