Abstract
AbstractA novel technique is proposed for the growth of an InN film on a GaN/Al2O3 (0001) template by radio‐frequency plasma‐excited molecular beam epitaxy (RF‐MBE). The method involves 1) InN growth under an In‐rich condition and 2) additional nitrogen radical irradiation after the InN growth under an In‐rich condition. Excess In that appeared on the InN surface in the InN growth under an In‐rich condition is transformed to InN by the additional nitrogen radical irradiation. The effective V/III ratio is easily controlled by monitoring the intensity in a reflection high‐energy electron diffraction (RHEED) pattern. The growth of the InN film by repeating the InN growth under an In‐rich condition and the additional nitrogen radical irradiation is also demonstrated. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
