Abstract
AbstractIn this paper, we demonstrate new results on controllable HVPE growth of nitride materials with a deposition rate below 0.02 microns per minute and the first quantum size structures fabricated by HVPE. The nm‐scale layer thicknesses were verified by transmision electron microscopy (TEM) and photoluminescence (PL). Quantum well (QW) GaN/AlGaN and AlN/AlGaN structures have been grown by HVPE for the first time. Properties of the HVPE grown QWs are reported. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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