Novel homoleptic, dimeric zinc(II) phthalocyanines as gate dielectric for OFET device

Abstract

A novel multicomponent system consisting of benzene-1,4-diyldimethanimine bridged dimeric zinc-phthalocyanine groups was synthesized. Firstly, a novel unsymmetrically nitro and 2,4-di-tert-butylphenoxy groups substituted zinc (II) phthalocyanine was synthesized and then nitro group was reduced to amino functional group. All newly synthesized compounds were characterized by UV–Vis, FTIR, 1H-NMR, MALDI-TOF MS and elemental analysis spectral data. The potential of these compounds as gate dielectric were investigated by fabricating bottom gate top contact OFET using poly 3-hexylthiophene-2,5-diyl as active layer. Field effect mobility values of 3.2×10−4cm2/Vs was obtained when using ITO-coated glass as gate electrode. It was found that the density of leakage current was about 2nA/cm2 at 5V. The capacitance density of 11.8nF/cm2 was achieved at a frequency of 5Hz with slightly smaller values at higher frequency.