Abstract
A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design (TCAD) Sentaurus and advanced design system (ADS) simulations. The gate of the new structure is 5 nm higher than the barrier layer, and the buffer layer has two recessed regions in the buffer layer. The TCAD simulation results show that the maximum drain saturation current and transconductance of the HGMRB HEMT decreases slightly, but the breakdown voltage increases by 16.7%, while the gate-to-source capacitance decreases by 17%. The new structure has a better gain than the conventional HEMT. In radio frequency (RF) simulation, the results show that the HGMRB HEMT has 90.8%, 89.3%, and 84.4% power-added efficiency (PAE) at 600 MHz, 1.2 GHz, and 2.4 GHz, respectively, which ensures a large output power density. Overall, the results show that the HGMRB HEMT is a better prospect for high energy efficiency than the conventional HEMT.
Highlights
Wide-bandgap semiconductor materials exhibit many attractive properties far beyond the capabilities of silicon, such as high critical breakdown electric field strength, carrier drift velocity, high thermal conductivity, and large carrier mobility
The wide-bandgap semiconductor device gallium nitride (GaN) high-electron-mobility transistor (GaN HEMT) has the advantages of high frequency, high power density, high withstand voltage, and high efficiency; it is used in civil communication, Internet of things, petroleum exploration, aerospace, and so on [10,11]
Such designs often lead to shortcomings such as poor transistor withstand voltage, large parasitic capacitance, and a narrow transconductance saturation region, which have a great influence on important performance parameters such as output power and power-added efficiency of the device
Summary
Wide-bandgap semiconductor materials exhibit many attractive properties far beyond the capabilities of silicon, such as high critical breakdown electric field strength, carrier drift velocity, high thermal conductivity, and large carrier mobility. Most research on GaN HEMTs is based on peripheral circuits to regulate and compensate transistors to achieve better output characteristics [12] Such designs often lead to shortcomings such as poor transistor withstand voltage, large parasitic capacitance, and a narrow transconductance saturation region, which have a great influence on important performance parameters such as output power and power-added efficiency of the device. The parameters in the EE_HEMT model were obtained from the TCAD simulations, known literature, and technical manuals, the gate was the input terminal, and the drain was the output terminal, in the different frequency bands of 600 MHz, 1.2 GHz, and 2.4 GHz. The simulation results obtained using Synopsys TCAD Sentaurus and ADS software show that the new structure has better RF characteristics and greater power-added efficiency (PAE). The barrier layer of the HGMRB structure will be smaller than the conventional HEMT, resulting in a decrease in channel current.
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