Abstract

Ensemble Monte Carlo simulations are employed in order to explore the feasibility of a novel real-space transfer logic transistor (RSTLT) structure. The operational principles of the proposed RSTLT are based on the concept of hot electron real-space transfer (RST), including the fact that the spatial location of electron RST is determined by applied bias and heterointerface energy barrier height in a multiterminal heterojunction microstructure. The results of two-dimensional, self-consistent steady-state and transient simulations demonstrate that the proposed RSTLT features ultrafast current switching which can be used to realize NOT/EQUIVALENT logic functions in a single heterojunction device. The logic operation is easily extended to NOR/AND functions. A conservative estimate of the characteristic delay time for current switching is approximately 3 ps in the proposed RSTLT structure. >

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