Abstract
Novel glass-free low temperature firing microwave dielectric ceramics, Bi(Ga1/3Mo2/3)O4, with ordered scheelite structure, were prepared through a conventional solid state reaction method. Dense ceramics were prepared at sintering temperatures from 800 to 860°C. The Bi(Ga1/3Mo2/3)O4 compound was crystallized with B-site ordered Scheelite-type structure with space group C2/c. The Bi(Ga1/3Mo2/3)O4 ceramics can be well sintered at about 830°C, exhibiting good microwave dielectric properties of εr~26.1, Qf~49,800GHz, and TCF~−86ppm/°C. Intrinsic dielectric parameters of the Bi(Ga1/3Mo2/3)O4 ceramics were estimated by fitting far-infrared (FIR) reflectance spectra with the classical harmonic oscillator model.
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