Abstract
A highly reliable metallised GaAs Ta-Schottky-barrier diode with native-oxide passivation has been developed. The zero bias cutoff frequency of these diodes is greater than 1000 GHz when measured accurately near 60 GHz, with a zero-bias junction capacitance near 0·1 pF. This zero-bias cutoff frequency is approximately twice the value for a comparable nonmetallised device. The letter describes the r.f. properties and the structure of the device.
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