Novel fully vertical GaN p–n diode on Si substrate grown by metalorganic chemical vapor deposition

Abstract

We report novel GaN fully vertical p–n diode on Si grown by metalorganic chemical vapor deposition. The thick strained layer superlattice is effective in controlling a doping level of 1016 cm−3 in an n−-GaN drift layer. The GaN p–n diode exhibits a differential on-resistance Ron of 7.4 mΩ cm2, a turn-on voltage of 3.4 V, and a breakdown voltage VB of 288 V. The corresponding Baliga’s figure of merit (FOM) is 11.2 MW/cm2. A good FOM value for the GaN-on-Si vertical p–n diode is realized for a drift layer thickness of 1.5 µm without using substrate removal technology.