Abstract
AbstractA novel FP structure, namely the floating field plate (FFP), is proposed to obtain a high breakdown voltage (VB) in AlGaN/GaN HEMTs. The FFP is characterized by electrically floating metals that are placed between the gate and drain electrodes beside a conventional field plate (FP). An optimization procedure for the FFP structure using an analytical model was investigated. Our numerical simulations yielded a VB value for the optimized FFP‐HEMTs of more than 2 kV, which is twice that of a conventional FP‐HEMT. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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