Abstract
The photoconductivity and photoluminescence spectra measured on MBE-grown modulation-doped AlGaAs/GaAs heterojunctions show a novel structure consisting of several sharp excitonic-like peaks extended up to ≈ 30 meV above the bulk GaAs exciton recombination energy. Their two-dimensional (2D) nature has been confirmed by an external magnetic field angle dependence. The two proposed models assume localized centers of donor and acceptor nature concentrated at or near the interface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
