Abstract
A ternary cell based on a novel electronic circuit element with field effect operation is presented. The new non-inverting element has unique properties with a negative resistance characteristic over its complete range. It has been designed for use in complementary multiple-valued digital systems. Ternary and binary memory cells with a feedback resistor are presented. Without this resistor the memory cells act as a driver. Binary use is also possible in mixed ternary/binary circuits within one physical technology. This mixed use is necessary for the communication with binary systems.
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