Abstract
Submicron T gates have been fabricated using the high resolution electron beam lithography technique. The footprint of the T gate has been written in high molecular weight poly-methyl methacrylate (PMMA), whereas the top of the T gate is defined in AZ PF 514. A 400 nm thick layer of PMMA was first exposed and developed followed by the spinning of AZ PF 514. A wide line defining the top of the T gate was written in this resist which after development gave a T-shaped cross section. As both the bottom and the top of the T gate are dealt with independently, therefore, the technique provides a high degree of control and flexibility in the fabrication process. Moreover, the possibility of shorting of the top of the T gate with the Ohmic metallization is virtually impossible. Consequently, the process is a very good candidate for low-noise GaAs metal-semiconductor field-effect transistors (MESFETs) fabrication in which a narrow drain-to-source gap is required. GaAs MESFETs with T-shaped gates have been fabricated and characterized by dc measurements.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.