Novel electron-beam image-based failure localization techniques

Abstract

This paper describes three newly developed LSI failure point localization techniques based on voltage contrast imaging with an electron beam tester, two of them are for logic LSI's and one is for memory LSI's. These techniques have already been applied to more than 280 logic and 25 memory LSI's which were found faulty not only in the field but during the LSI development and production stage. Almost all failure causes were successfully identified, allowing the quick corrective action to LSI design or the wafer processing.