Abstract
This paper reports, for the first time, on the design and demonstration of two novel electrode configurations in dual-layer stacked Aluminum Nitride (AlN) piezoelectric contour-mode resonators to obtain low filter termination resistance (down to 300 Ω, which also results in better filter out-of-band rejection) and reduced insertion loss (IL as low as 1.6 dB) in multi-frequency (100 MHz – 1 GHz) AlN MEMS filters. The microfabrication process is fully compatible with the previously demonstrated AlN RF MEMS switches, which makes it possible to design and integrate multi-frequency switchable filter banks on a single chip.
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