Abstract
Dual-metal junctionless nanotube field-effect transistors (DMJN-TFETs) for improvised analog and digital applications are described. It has been realized that, compared with existing junctionless nanowire FETs, in particular, junctionless-gate all around (J-GAA) metal oxide semiconductors (MOS) FETs, dual-metal junctionless-gate all around (DMJ-GAA) MOSFETs, and junctionless nanotube (JN) FETs, DMJN-TFET MOSFETs exhibit higher Ids, gm, gd and fT compared with the JNFETs, making it a favorable device for high-frequency analog FET applications. DMJN TFETs exhibit a surpassing ION/IOFF ratio, with the subthreshold slope approaching the ideal values, a mitigated device channel resistance (Rch), advanced early voltage (VEA), a higher transconductance generation factor, maximum transducer power gain, unilateral power gain, and minimized noise conductivity and noise figure. Also, the small signal metrics including the transmission coefficients (S21 and S12) and reflection coefficients (S11 and S22) have been investigated to authenticate the small signal conduct of our device. These improvised characteristics make a DMJN-TFET the most suitable device design for both digital and analog applications employing FETs.
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