Abstract
We demonstrate the direct wafer bonding of GaN and ZnSe-based materials. We report on the structural, optical, and electrical characteristics of InGaN/GaN light-emitting diodes (LEDs) and ZnSe-based II–VI materials combined by direct wafer bonding. Reflectivity, transmission electron microscopy (TEM), and current–voltage (I –V ) measurements were performed. The bonded sample exhibited a higher reflectivity at the wavelength of 510 nm than a control LED with an Al cap. Cross-sectional TEM revealed a uniform wafer-bonded interface with no voids or cavities for the low temperature sample, while the sample bonded at a higher temperature was observed to have lens-shaped cavities at semiconductor interfaces. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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