Abstract
A novel design topology for ultra low power receivers and down converters has been developed. Using this topology, a monolithic L-band down converter consisting of an input amplifier and a double balanced mixer has been implemented with a standard 0.7 /spl mu/m GaAs MESFET process. The circuit has a single ended 50 /spl Omega/ input and differential outputs offering totally more than 40 dB voltage conversion gain at 1 GHz and 30 dB at 2 GHz. It is supplied by a single lithium cell and has a DC power consumption of less than 2.0 mW at 2.7 V/sub DC/. >
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