Abstract
We theoretically investigate the electronic structure properties of modified design GaSb-based type-II W-shaped quantum wells predicted for applications in interband cascade lasers. The results show that introducing a tensely-strained GaAsSb layer to confine the holes offers an additional tuning knob for the active optical transition oscillator strength and emission wavelength. Moreover, such a solution allows exploiting designs with thicker quantum well layers, which translates into a decreased sensitivity of the system to the growth inaccuracies, making it more robust and thus easier to reproduce.
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