Abstract
We design and fabricate a novel Silicon NanoWire ( SiNW) array over the buried-oxide layer of (111) Silicon-On-Insulator (SOI) by using conventional microfabrication methods. Based on deep reactive ion etching (DRIE) and anisotropic wet etching, the help of horizontal control of silicon wall width and longitudinal control of top silicon thickness, the adjustment of nanowire size is improved. After thermal oxidation and release, the suspended nanowires located at the bottom of the cavity are more stable and robust than our previous reported SiNW array which is at the top of the cavity.
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