Abstract
Conditioning of polishing pads during chemical mechanical planarization (CMP) of wafers is a critical process for maintaining productivity and quality control in the semiconductor industry. This investigation aims at developing a CMP diamond conditioner of a new concept and hence improving the conditioning performance. The novel diamond conditioner was fabricated by coating diamond films on a Si 3N 4 substrate with regularly patterned protrusions. Thanks to the uniform distribution and constant height of protrusions, the novel conditioner exhibited superior performance and durability over the current conditioner, which contains bonded diamond grits of various sizes and shapes with unequal heights. Characterization of the developed novel diamond CVD conditioner has also been made.
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